You weren’t explicitly saying it, but some might infer it, so I think it’s worth mentioning that bit flips in RAM aren’t necessarily radiation-induced. Some other causes are heat and aging (both increase capacitor leakage, and DRAM cells are tiny capacitors), or lack of robustness in refresh logic.
Another cause, at least in the old days, was bad board design, in which badly-placed traces could induce currents in other traces. Of course this only happened two+ hours into the test.
